Setup under commissioning, it is dedicated to micromachine the surface of materials.
The purpose of the RIE machine is to etch patterns of semiconductor materials (e.g. silicon, diamond) using a chemically reactive gas in plasma state. The plasma is generated in vacuum conditions by an electromagnetic field and directed towards a substrate patterned with photo-lithographic technique or a hard mask. High-energy ions from the plasma can physically etch the material under treatment or react with its surface to remove atoms of the target material with high anisotropy.
TECHNICAL SPECIFICATIONS
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Etching thicknesses are limited to few micrometers
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reactive gases: Ar, O2
AVAILABLE TECHNIQUES
- Reactive Ion Etching (RIE)
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