In a previous study, surprising results on the neutralization of N effects on the band gap of InGaAsN alloys were explained through theoretical studies that revealed a new phenomenon: the modification of the InGaAs host matrix through thermal annealing, which selects the N-H complex responsible for N neutralization.
Considering the potential technological applications of this effect, the host matrix model was thoroughly verified through theoretical simulations of InGaAsN alloys with varying compositions, ranging from Ga-rich to In-rich extremes.
In the work published in Advanced Functional Materials, this study provided a comprehensive explanation of the origin of the host matrix effect. It detailed the mechanism of the effect, its clear occurrence, and offered guidelines for modulating the band gap through matrix design. Additionally, the study established conditions for extending the effect to other III-V alloys and suggested methods for introducing fine variations in the mechanical behavior of the alloy.
The entire study was conducted at CNR-ISM.
Monday, 13 January 2025 09:20
Origin and Potentialities of the Selective Host-Matrix Effect in Hydrogenated III-V-N Alloys - New Article

InGaAsN alloys are a widely studied class of materials, useful in the design of devices where band gap modification, whether general or localized, can lead to the production of low-dimensional quantum phenomena.
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