Defects in bulk materials
Defects in bulk materials
- Calculations of properties of defects in semiconductors and insulators:
- geometries (XANES,EPR,HRTEM),
- electronic levels (PES), thermal levels (DLTS, Hall),
- formation/binding/migration energies (equilibrium defect concentration, thermal diffusion coefficients),
- defect-induced magnetism.
CASE STUDIES
- Ciatto G., et al.
Evidence of Cobalt-Vacancy Complexes in Zn1-xCoxO Dilute Magnetic Semiconductors
Phys. Rev. Lett, 2014, 107, 127206
- Alippi P., Cesaria M., Fiorentini V.
Impurity-vacancy complexes and ferromagnetism in doped sesquioxides
Phys. Rev. B, 2014, 89, 134423
- Mattioli, G., Alippi, P., Filippone, F. et al.
Deep versus Shallow Behavior of Intrinsic Defects in Rutile and Anatase TiO2 Polymorphs
J. Phys. Chem. C 2010, 114, 21694
- Alippi P., Ruggerone P., Colombo L.
Neutral boron-interstitial clusters in crystalline silicon
Phys. Rev. B, 2004, 69, 125205
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