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MBE2

III-V MBE 2 growth system MBE2 (III-V)

Paola De Padova -

Carlo Ottaviani  -

Sandro Priori  -

Laboratory IC11

Rome - Tor Vergata
 
In epitaxy the surface is exposed to a gas, for example, Metal (M)/Semiconductor (SC) vapor, which condenses on the surface. In this way the surface becomes a contact place between two solids which is called: interface. The fundamental question in epitaxy is whether the gas atoms adsorbed on the surface wet the surface or form islands. This case occurs as a result of strong forces between adsorbate and surface atoms (at T=0): this is a typical case of adhesion. If the adsorbate-adsorbate interaction is stronger than adsorbate-surface interactions, islands form on the surface, which are termed clusters. Hence, the wetting properties of a “gas” upon a specify surface are the necessary conditions for the epitaxial growth.
 

TECHNICAL SPECIFICATIONS

  • Working pressure ~10-10 mbar mbar  
  • In, Ge, Mn, Ni, Cr, Fe effusion cells;
  • Sb, As, Bi- Surfactants effusion cells;
  • Ag, Zn- Capping Layer effusion cells;
  • DC direct sample heating (RT-1200 °C) and Indirect heating (RT-450 °C ) systems
  • Air-vacuum Fast Load-lock Sample Transfer System;
  • Quartz Microbalance;
  • Ar+ Ion sputtering system;+;
  • O Gas-line;
  • e-- HV variable (0-15) KeV for for RHEED system;
  • e-- HV variabile (0-0.5) KeV for LEED system;
  • AES/SE/REELS spectroscopies; double-pass CMA, e- (HV = 0-5) KeV;ΔE=1.2%PE (UPS/ESCA); ΔE=1.2%Ekin eV (AES);
  • In-situ lock-in  
  • SMOKE system.
  • H-Speed Camera real-time for data diffraction PATTERN acquisition (Image-software-MAC).

AVAILABLE TECHNIQUES

  • Ultra-High Vacuum (UHV) System for Surface Science Investigations:
  • LEED/RHEED/AES/SE
    REELS/SMOKE systems;
  • Chemical composition chemical bonding at surface; work function, molecules hybridization and valence orbitals investigation;  
  • Diffraction pattern  
    from low- and -high e-;  
  • Surface magneto-optics Kerr effect;
  • Analysis of samples in the presence of a gases (O and other);  
  • Heating/cooling (LN) of samples from ~ 80 to 1200 °C during analysis;
  • Clean Semiconductor (SC), Metal (M)-Surfaces reconstruction
  • Epitaxial growth SC/SC, SC/Metal/SC;
  • Homo- and Hetero-structures growth: 1D, 2D and 3D Materials.
 

SAMPLES

  • Sample lateral dimensions: 10 x 5 mm (ideal), 3 x 3 mm (minimal), 10 x 10 mm (maximal);

  • Sample thickness: ideally up to 2 mm (thicker and/or smaller samples also feasible).

USED FOR

  • Fundamental Surface Science study;

  • Artificial Atomic Epitaxial Growth;

  • Discovery of new 1D, 2D and 3D epitaxial SC/SC; M/SC for micro-nanoelectronics and solar cells purposes;

  • Semiconductor/ Microelectronics;

  • Microcircuits;;

  • Ultra-thin Films;

  • Samples Cleaning;
     
  • Thin-film Stability;
     
  • Barrier Layers;
     
  • Lubrication;
     
  • Chemical Industry;
     
  • Coatings/Catalysis.
 
 
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