Consiglio Nazionale delle Ricerche - Istituto di Struttura della Materia
Growth of Straight, Atomically Perfect, Highly Metallic Silicon Nanowires with Chiral Asymmetry
Paola De Padova†, Claudio Quaresima†, Paolo Perfetti†, Bruno Olivieri‡, Christel Leandri§, Bernard Aufray§, Sebastien Vizzini§, and Guy Le Lay§†CNR-ISM, Via Fosso del Cavaliere, 00133 Roma, Italy, ‡CNR-ISAC, Via Fosso del Cavaliere, 00133 Roma, Italy, and §CRMCN-CNRS, Campus de Luminy, Case 913, 13288 Marseille Cedex 9, France
ABSTRACTIn the quest of nano-objects for future electronics, silicon nanowires could possibly take over carbon nanotubes. Here we show the growth by self-organization of straight, massively parallel silicon nanowires having a width of 1.6 nm, which are atomically perfect and highly metallic conductors. Surprisingly, these silicon nanowires display a strong symmetry breaking across their widths with two chiral species that selfassemble in large left-handed and right-handed magnetic-like domains.
Figure (a) Normal (0deg) emission convoluted Si 2p core levels for SiNWs after the deposition of 0.5 ML of Si on Ag(110); (b) 3D view of 10.2 ×10.2 nm2 filled-states STM image: dip asymmetry at right-side.