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Nano Letters Vol. 8 (1) 271-275 (2008)

Growth of Straight, Atomically Perfect, Highly Metallic Silicon Nanowires with Chiral Asymmetry

Paola De Padova^†, Claudio Quaresima^†, Paolo Perfetti^†, Bruno Olivieri^‡, Christel Leandri^§, Bernard Aufray^§, Sebastien Vizzini^§, and Guy Le Lay^§

^†CNR-ISM, Via Fosso del Cavaliere, 00133 Roma, Italy, ^‡CNR-ISAC, Via Fosso del Cavaliere, 00133 Roma, Italy, and ^§CRMCN-CNRS, Campus de Luminy, Case 913, 13288 Marseille Cedex 9, France

ABSTRACT

In the quest of nano-objects for future electronics, silicon nanowires could possibly take over carbon nanotubes. Here we show the growth by self-organization of straight, massively parallel silicon nanowires having a width of 1.6 nm, which are atomically perfect and highly metallic conductors. Surprisingly, these silicon nanowires display a strong symmetry breaking across their widths with two chiral species that selfassemble in large left-handed and right-handed magnetic-like domains.


Figure (a) Normal (0deg) emission convoluted Si 2p core levels for SiNWs after the deposition of 0.5 ML of Si on Ag(110); (b) 3D view of 10.2 ×10.2 nm² filled-states STM image: dip asymmetry at right-side.

Contatto:

Notizie

• Il Premio Nobel Albert Fert alla Conferenza Magnet '09
• Assegnato il Premio "Marcofabio Righini 2009"

Eventi

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Focus

Nanocomposite Materials



J. Phys. D: Appl. Phys., 2010
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