Ernesto Placidi CV


  • Education:
    DEGREE IN PHYSICS:
    – Italian “Laurea” Degree – graduated at the University of Rome “Tor Vergata” on December 21st 1998, discussing the Thesis: “Study of first stages of the formation of the Ag/GaAs(001) β2(2×4) interface by means of tunnelling microscopy and spectroscopy”
    Supervisor: Prof. N. Motta. Final score: 110/110.
    External referee: Dr. A. Cricenti, Istituto di Struttura della Materia Consiglio Nazionale delle Ricerche (ISM-CNR), Rome.
    Ph.D. IN PHYSICS:
    Thesis title: “HREELS as a probe of surface anisotropy” Defense: February 25th, 2003.
    Supervisor: Prof. A. Balzarotti (Univ. of Rome “Tor Vergata”).
    External referee: Prof. M.G. Betti, University of Rome “La Sapienza”.
    The work was carried out at the MBE Laboratory, Physics Dept., University of Rome “Tor Vergata”.
  • PROFESSIONAL EXPERIENCE:
    April 1999 – October 1999: INFM (National Institute for the Physics of the Matter) post-graduate grant, spent in the laboratory of Prof. Balzarotti. Università degli studi di Roma “Tor Vergata” Roma
    November 1999 – October 2002: PhD Fellowship at University of Rome “Tor Vergata”.
    November 2002 – November 2003: Post-Doc Fellowship “Forum FIB Project” of European Community at University of Rome “Tor Vergata”
    December 2003- February 2009: Research Scientist at the CNR-INFM.
    May 2004 – September 2004: PhD Fellowship in Electronic Materials Section of the “Centre for Electronic Materials and Devices”, Inorganic Chemistry department, Imperial College, London. “Lincei – Royal Society” 2004 Grant.
  • PRESENT EMPLOYMENT (From February 2009):
    Research Scientist (permanent staff) at the ISM-CNR institute.
  • LANGUAGES:
    English: excellent;
    Italian: Mother Tongue;
    French: (written / oral): good.
  • INFORMATION TECHNOLOGY SKILLS:
    Programming using FORTRAN, TurboPascal and LabView;
    Data Analysis using Image SXM, WSxM, Microcal Origin and Kaleidagraph;
    “TEX / Latex” and Scientific Word for composing Scientific Texts;
    Video writing and graphics using Microsoft Office;
    Graphics using Adobe Photoshop and Claris Works;
    Browsing the Internet for quick information access.
  • SUPERVISOR: Supervisor/Co-supervisor of undergraduate students (Rome).
    Students: S. Nufris, M. Tessaro Porta, S. De Giorgio, M. Ippolito, V.Sessi, E.Orsini, A. Della Pia, E. Zallo.
  • TECHNICAL SKILLS:
    Ultra – High – Vacuum Technology;
    Electron Optics, Electron Analyzers;
    Electron Spectroscopies:
    a) EELS (Electron Energy Loss Spectroscopy)
    b) AES (Auger Electron Spectroscopy)
    c) XPS (X-ray Photoemission Spectroscopy)
    d) UPS (UV-ray Photoemission Spectroscopy)
    Electron Diffraction Techniques:
    a) RHEED (Reflection High Energy Electron Diffraction);
    b) LEED (Low Energy Electron Diffraction);
    Scanning Probe Microscopies:
    a) STM (Scanning Tunneling Microscopy) in air and UHV
    b) STS (Scanning Tunneling Spectroscopy) in UHV
    c) AFM (Atomic Force Microscopy) in air and in UHV
    Epitaxial Growth Techniques: MBE (Molecular Beam Epitaxy) on III-V compounds
    Optical Techniques:
    a) RAS (Reflectivity Anisotropy Spectroscopy);
  • RESEARCH ACTIVITY
    I carried out my Degree (Laurea) thesis under the supervision of Prof N. Motta in the SPM facility at INFM- Dept. of Physics, University of Rome – Tor Vergata, acquiring the degree on 1998. In this period my main work was devoted to the growth and characterization in UHV of Ag/GaAs(001) interface. In 1999 I obtained a Graduate Grant and, at the end of the same year, the PhD fellowship to work in the group of Prof. A. Balzarotti. My PhD thesis was devoted to the MBE growth and characterization of GaAs(100).
    After the PhD I got a Post-Doc Fellowship related to “Forum FIB Project” of EU Community. Finally I got a research Scientist position in the CNR-INFM.
    My main scientific skills are:
    – Semiconductor heterostructures. A relevant part of my scientific activity has been the morphological study of InAs and InGaAs quantum dots grown on GaAs surface. The main activity has been the growth and characterization of such heterostructures by means of Molecular Beam Epitaxy and Scanning Probe Microscopes (STM and AFM).
    – Magnetic Semiconductors(GaMnAs and InMnAs). Collaboration with the STM group in the ISM CNR institute (A. Cricenti, S. Colonna, F. Ronci) investigation of local interactions of the magnetic impurities in the diluted magnetic semiconductors and with Nanoscale Science Department, Max-Planck-Institute for Solid State Research, Stuttgart (J. Honolka, K. Kern)
    – Electronic and optical structure of surfaces: the electronic structure of surfaces has been studied with the use of several electronic (EELS, UPS, XPS) and optical spectroscopies (RAS).
  • TEACHING EXPERIENCE:
    1. Teaching Assistant in the laboratories for the students of 1st and 2nd year (curriculum for the degree in physics). University of Rome “Tor Vergata”, September 1996 – July 1997
    2. Teaching Assistant in the laboratories for the students of 3rd and 4th year (curriculum for the degree in physics). University of Rome “Tor Vergata”, September 1997 – July 1998
    3. Teaching Assistant, “Material Science” and “Structure of the Matter” at the Material Science department (Faculty of Science) of the University of Rome “Tor Vergata”, November 1999 – May 2000
    4. Teaching Assistant, “Structure of the Matter” at the Material Science department (Faculty of Science) of the University of Rome “Tor Vergata”, November 2000 – May 2001
    5. Physics teacher in the “ITC e per geometri, M. Buonarroti” (High school) December 2001 – June 2002.
    6. Physics teacher in the “ITC e per geometri, M. Buonarroti” (High school) March 2002 – June 2003.
    7. Lessons for “Surface physics” at the Physics department (Faculty of Science) of the University of Rome “Tor Vergata”, 2003/2006
    8. Teaching Assistant, “Laboratory for the structure of the matter” at the Physics department (Faculty of Science) of the University of Rome “Tor Vergata”, November 2003 – April 2004
    9. Teaching Assistant, “General Physics I and Laboratory of Physics” at the Material Sciences department (Faculty of Science) of the University of Rome “Tor Vergata”, March 2005 – June 2007
    10. Lecture, “Laboratory of Physics” at the Material Sciences department (Faculty of Science) of the University of Rome “Tor Vergata”, March 2008 – June 2008
    11. Teaching Assistant, “Laboratory for the structure of the matter” at the Physics department (Faculty of Science) of the University of Rome “Tor Vergata”, March 2009 – June 2009
    12. Lecture, “Laboratory of Physics” at the Material Sciences department (Faculty of Science) of the University of Rome “Tor Vergata”, March 2010 – June 2010
  • FELLOWSHIPS:
    – Ph D Fellowship, University of Rome “Tor Vergata”, 1999 – 2002.
    – ERASMUS stage in the laboratory of surfaces electron properties (LEPES) in the French National Research Institute (CNRS). Université “Joseph Fourier” Grenoble (France), July 1997 – September 1997
    – SOCRATES intensive program “Vacuum Physics and Techniques”. Universitè Catholique de Louvain, Louvain-la-Nevue (Belgium), May 1998.
    “Lincei – Royal Society” 2004 “Growth Mechanisms in dilute nitride GaAs based semiconductor alloys”.
  • EXTRA – ACADEMIC COURSES:
    1. Successfully took part in the LabView base course (National Instruments Italy Srl) Rome 1997.
    2. Enabled to the teaching of Physics in High schools by means of state competitive examination. Latina, September 2000.
  • GRANT PROPOSAL WRITING:
    Young researcher grant (University of Rome “Tor Vergata”): “Electronic and Structural properties of GaAs(001) surface” (October 2000 – September 2001).
  • GRANT PROPOSAL CO-WRITING:
    – Cofin 2002: Growth of semiconductors quantum dots on nanopatterned substrates
    – FORUM FIB, Fabrication ORganisation and Use of Memories obtained by Focused Ion Beam IST-2000-29573 (Luglio 2001- Luglio 2004)
    – FIRB 2002: Nanotecnologie e Nanodispositivi per la societá dell’informazione. Workpackage 3: Nanodispostitivi e architetture per l‘optoelettronica. Attività 3.1 Emettitori nanostrutturati
    – COFIN 2004
    – PRIN 2005: Nucleazione selettiva di punti quantici di InAs su GaAs(001).
    – PRIN 2007: Colmare la distanza tra teoria ed esperimento: verso il controllo della crescita e delle proprietà delle nanostrutture di semiconduttori.
  • AWARDS
    CNR Award “Incentivazione al personale anno 2005”
  • OTHER
    National Service: Served during the period 21.06.2000 – 17.04.2001.
  • REFEREE ACTIVITY
    – Article Referee for Surface Science, Applied Physics letters, Nanotechnology, Journal of Physics: Condensed Matter (and other IOP journals), Journal of Vacuum Science and Technology, Nanoscale research letters.
    – Project Referee for Natural Sciences and Engineering Research Council of Canada
  • PUBLICATIONS:
    1) E. Placidi, M. Fanfoni, F. Arciprete, F. Patella, N. Motta, A. Balzarotti. Scaling law and dynamical exponent in the Volmer-Weber growth mode: Silver on GaAs(001) 2 × 4 Mat. Sci. & Eng. B 69-70 (2000) 243-2462) M. Fanfoni, E. Placidi, F. Arciprete, F. Patella, N. Motta, A. Balzarotti. Dynamic behaviour of silver islands growing on GaAs(001) 2 × 4 substrate, Surf. Sci. 445 (2000) L17-L223) F. Patella, M. Fanfoni, F. Arciprete, S. Nufris, E. Placidi, and A. Balzarotti. Kinetic aspects of the morphology of self-assembled InAs quantum dots on GaAs (001), Appl. Phys. Lett. 78 (2001) 320-322 and Virtual Journal of Nanoscale Science & Technology, Volume 3, Issue 44) F. Patella, F. Arciprete, E. Placidi, S. Nufris, M. Fanfoni, A. Sgarlata, D. Schiumarini, A. Balzarotti. Morphological instabilities of the InAs/GaAs(001) interface and their effect on the self-assembling of InAs quantum-dot arrays, Appl. Phys. Lett. 81 2273-2275 (2002) and Virtual Journal of Nanoscale Science & Technology Volume 6, Issue 13 (2002).5) A. Balzarotti, M. Fanfoni, F. Patella, F. Arciprete, E. Placidi, G. Onida, R. Del Sole, The GaAs(001) c(4×4) surface: A New Perspective from Energy Loss Spectra, Surf. Sci. Lett. 524, L71-L76 (2003).6) A. Balzarotti, M. Fanfoni, F. Patella,F. Arciprete, and E. Placidi, Electronic anisotropy of the GaAs(001) surface studied by the energy loss spectroscopy, Microel. J. 34, 595-597 (2003)

    7) F. Patella, S. Nufris, F.Arciprete, M. Fanfoni, E. Placidi, A. Sgarlata, and A. Balzarotti. Structural Study of the InAs Quantum-Dot Nucleation on GaAs(001), Microel. J. 34, 419-422 (2003)

    8) A. Balzarotti, E. Placidi, F. Arciprete, M. Fanfoni, F. Patella, Anisotropy of the GaAs(001)-β2(2×4) surface from high-resolution electron-energy-loss spectroscopy, Phys. Rev. B, 67 115332 (5 pages) (2003).

    9) F. Patella, S. Nufris, F. Arciprete, M. Fanfoni, E. Placidi, A. Sgarlata, and A. Balzarotti, Tracing the two-to-three dimensional transition in the InAs/GaAs(001) heteroepitaxial growth, Phys. Rev. B, 67 205308 (5 pages) (2003).

    10) F.Arciprete, C. Goletti, E. Placidi, M.Fanfoni, F.Patella, P. Chiaradia, C. Hogan and A. Balzarotti, Surface versus bulk contributions from reflectance anisotropy and electron energy loss spectra of the GaAs(001)-c(4 x 4) surface, Phys. Rev. B, 68 125328 (5 pages) (2003).

    11) F. Arciprete, C. Goletti, E. Placidi, C. Hogan, P. Chiaradia, M. Fanfoni, F. Patella, and A. Balzarotti, Surface states at the GaAs(001)2 x 4 surface, Phys. Rev. B 69, 081308(R) (4 pages) (2004)

    12) F. Patella, A. Sgarlata, F. Arciprete, S. Nufris, P. Skutznik, E. Placidi, M. Fanfoni, N. Motta and A. Balzarotti Self-assembly of InAs and Si/Ge quantum dots on structured surface, J. Phys. Cond. Matt 16 S1503-S1534 (2004).

    13) O.E. Tereshchenko, E. Placidi, P. Chiaradia, A. Balzarotti, and D. Paget, Structure of chemically prepared InAs(100) surface, Surf. Sci. 570, 237-244 (2004).

    14) H. Guyot, N. Motta, E. Placidi and H. Balaska, Characterization of cleaved surfaces of a monophosphate tungsten bronze, Rev. Adv. Mater. Sci. 8 (2004) 34-40.

    15) I. Aureli, V. Corradini, C. Mariani, E. Placidi, F. Arciprete, A.Balzarotti , Valence band and In-4d core level study of de-capped and ion-bombarded-annealed In-terminated InAs(001) surfaces, Surf. Sci. 576, 123-130 (2005).

    16) C. Hogan, E. Placidi and R. Del Sole, Geometric structure and optical properties of the GaAs(001)-c(4×4) surface, Phys. Rev. B, 71, 041308(R) (4 pages) (2005).

    17) E. Placidi, F. Arciprete, V.Sessi, M. Fanfoni, F. Patella and A. Balzarotti, Step erosion during InAs quantum dots on GaAs(001) surface, Appl. Phys. Lett. 86, 241913, (three pages) (2005) and Virtual Journal of Nanoscale Science & Technology, Volume 11, Issue 24. Cover page for Appl. Phys. Lett.Volume 86, Issue 24.

    18) F. Patella, F. Arciprete, M. Fanfoni, V. Sessi, A. Balzarotti and E. Placidi, Reflection high electron energy diffraction observation of surface mass transport at the two- to three- dimensional growth transition of InAs on GaAs(001). Appl. Phys. Lett. 87, 252101 (3 pages) (2005) and Virtual Journal of Nanoscale Science & Technology, Volume 12, Issue 26 (2005).

    19) F. Patella, F. Arciprete, M. Fanfoni, A. Balzarotti, and E. Placidi, Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001). Appl. Phys. Lett. 88, 161903 (3 pages) (2006) and Virtual Journal of Nanoscale Science & Technology, Volume 13, Issue 17 (2006).

    20) E. Placidi, C. Hogan, F. Arciprete, M. Fanfoni, F. Patella, R. Del Sole, and A Balzarotti, Adsorption of molecular oxygen on GaAs(001) studied using high resolution electron energy loss study. Phys. Rev. B 73, 205345 (9 pages) (2006)

    21) F. Arciprete, E. Placidi, V.Sessi, M. Fanfoni, F. Patella and A. Balzarotti, How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: the case of InAs/GaAs(001). Appl. Phys. Lett. 89 041904 (3 pages) (2006) and Virtual Journal of Nanoscale Science & Technology, Volume 14, Issue 6 (2006)

    22) O.E. Tereshchenko, D. Paget, P. Chiaradia, E. Placidi, J.E. Bonnet, F. Wiame, and A. Taleb-Ibrahimi, Chemically prepared well-ordered InP(001) surfaces, Surf. Sci. 600, 3160-3166 (2006)

    23) E. Placidi, F. Arciprete, F. Patella, M. Fanfoni, E. Orsini and A. Balzarotti, Kinetic effects in the InAs/GaAs(001) two-dimensional to three-dimensional transition J. of Phys.: Cond. Matt. 19, 225006 (21 pages) (2007)

    24) P. D. Szkutnik, A. Sgarlata, E. Placidi, N. Motta, I. Berbezier and A. Balzarotti, Influence of patterned silicon and silica surfaces on the nucleation of Ge nanostructures. Surf. Sci. 601, 2778-2782 (2007).

    25) M. Fanfoni, E. Placidi, F. Arciprete, E. Orsini, F. Patella, A. Balzarotti, Sudden nucleation versus scale invariance of InAs quantum dots on GaAs, Phys. Rev. B 75, 245312 (2007), and Virtual Journal of Nanoscale Science & Technology Volume 15, Issue 24

    26) O. Bute, GH. V. Cimpoca, E. Placidi, F. Arciprete, F. Patella, M. Fanfoni, A. Balzarotti, The monitoring of 2d-3d transition for InAs/GaAs (001) self-assembled quantum dots by atomic force microscopy, J. of Opt. and Adv. Mat. 10, 74-79 (2008)

    27) L. Herrera Diez, R.K. Kremer, J. Honolka, K. Kern, A. Enders, M. Rössle, E. Arac, E. Placidi and F. Arciprete, Complex domain wall dynamics in compressively strained Ga1-xMnxAs epilayers, Phys. Rev. B 78, 155310 (2008)

    28) F. Patella, F. Arciprete, E. Placidi, M. Fanfoni, A. Balzarotti, A. Vinattieri, L. Cavigli, M. Abbarchi, M. Gurioli, Gerardino and L. Lunghi, Single quantum dots emission by nanoscale selective growth of InAs on GaAs: a bottom-up approach, Appl. Phys. Lett. 93, 231904 (2008), and Virtual Journal of Nanoscale Science & Technology Volume 18, Issue 25

    29) E. Placidi, A. Dalla Pia, F. Arciprete, Annealing effects on faceting of InAs/GaAs(001) quantum dots, Appl. Phys. Lett. 94, 021901 (2009) and Virtual Journal of Nanoscale Science & Technology Volume 19, Issue 4

    30) S. D. Thorpe, F. Arciprete, E. Placidi, F. Patella, M. Fanfoni, A. Balzarotti, S. Colonna, F. Ronci, A. Cricenti, A. Verdini, L. Floreano, A. Morgante, XPS study of Mn incorporation on the GaAs (001) surface, Superlattices and Microstructures 46, 258-265, (2009)

    31) F. Arciprete, E. Placidi, F. Patella, M. Fanfoni, A. Balzarotti, A. Vinattieri, L. Cavigli, M. Abbarchi, M. Gurioli, Gerardino and L. Lunghi, Selective growth of InAs quantum dots on SiO2-masked GaAs, J. Nanophoton. Vol. 3, 031995 (8 pages) (2009)

    32) F. Arciprete, E. Placidi, M. Fanfoni, F. Patella, A. Della Pia, A. Balzarotti, Temperature dependence of the size distribution function of InAs Quantum Dots on GaAs(001) Phys. Rev. B 81, 165306 (5 pages) (2010)

    33) L. Herrera Diez, J. Honolka, K. Kern, H. Kronmuller, F. Arciprete, E. Placidi, A.W. Rushforth, R.P. Campion, and B.L. Gallagher, Magnetic aftereffect in GaMnAs, Phys. Rev. B 81, 094412 (6 pages) (2010)

    34) I. Hamley, G. Brown, V. Castelletto, G. Cheng, M. Venanzi, M. Caruso, E. Placidi, C. Aleman, G. Revilla-López, D. Zanuy, Self-Assembly of a Designed Amyloid Peptide Containing the Functional Thienylalanine Unit, The Journal of Physical Chemistry B 114, 10674-10683 (2010)

    35) J. Honolka, L. Herrera Diez, R.K. Kremer, K. Kern, F. Arciprete, E. Placidi, Temperature dependent Néel wall dynamics in GaMnAs/GaAs, New J. Phys. 12, 093022 (17 pages) (2010)

  • Invited BOOK CHAPTERS
    1) E. Placidi, F. Arciprete, M. Fanfoni, F. Patella, and A. Balzarotti, The InAs/GaAs(001) quantum dots transition: advances on understanding, Lecture Notes on Nanoscale Science and Technology: “Self-Assembled Quantum Dots”, Springer, page 1-24 (2007).2) E. Placidi, F.Arciprete, R. Magri, M.Rosini, A Vinattieri, L. Cavigli, M. Gurioli, E.Giovine, L. Persichetti, M. Fanfoni, F. Patella and A. Balzarotti, InAs epitaxy on GaAs(001): a model case of strain-driven self-assembling of quantum dots, S. Bellucci (ed.), Self-assembly of Nanostrucures, Surfaces and Quantum dots. The INFN Lectures- Vol III/,/ Berlin Heidelberg: Springer Verlag, Lecture Notes in Nanoscale Science and Technology (in press).
  • ACCEPTED BEAMLINE PROPOSALS
    1 ELETTRA accepted proposal. Title: First stages of Mn/GaAs(001) interface formation. ALOISA 11-16/07/2007 (proposer E. Placidi)
    2 ELETTRA accepted proposal. Title: Magnetic properties of Mn/GaAs(001)1×2 reconstruction formation (proposer E. Placidi)
  • conference proceeding:
    1. F. Arciprete, F. Patella, M. Fanfoni, S. Nufris, E. Placidi, D. Schiumarini, and A. Balzarotti. Morphology of Self-Assembled InAs Quantum Dots on GaAs(001). Current Issues in Heteroepitaxial Growth – Stress Relaxation and Self Assembly. Symposium (Materials Res. Soc. Symposium Proceedings Vol.696), 2002, p 195-200. Also on Vol. 707), 2002, p 179-842. Nufris S., Arciprete F.; Patella F.; Placidi E.; Fanfoni M.; Sgarlata A.; Balzarotti A. Source: Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growth, Design and Nature, v 6, Design and Nature II: Comparing Design in Nature with Science and Engineering, 2004, p 195-1983. Bute O., Cimpoca Gh.V., Placidi E., Arciprete F., Patella F., Fanfoni M., Balzarotti A. The Influence of the Wetting Layer Morphology on the Nucleation and the Evolution of InAs/GaAs (001) Quantum Dots CAS 2007 Proceedings, IEEE Catalog Number 07TH8934, ISBN 1-4244-0846-4, ISSN 1545-827X, pp.337-340.4. The study of self-assembled nanostructures by Atomic Force Microscopy, O. Bute, E. Placidi, F. Arciprete, F. Patella, M. Fanfoni, A. Balzarotti, V. Cimpoca, Convergence of MICRO-NANO-BIOTEHNOLOGIES5. O. Bute, V. Cimpoca, E. Placidi, F. Arciprete, The monitoring of 2D-3D transition for InAs/GaAs (001) self-assembled quantum dots by atomic force microscopy Journal Of Science And Arts 9, 347-352 (2008) ISSN 1844-9581
  • CONFERENCES AND WORKSHOPS
    1. STM study of the Ag/GaAs(001) and island formation. E. Placidi, M. Fanfoni F. Arciprete, F. Patella, N. Motta, A. Sgarlata and A. Balzarotti; E-MRS Meeting, European Material and Research Science, Strasbourg (France) June 1-4, 1999 – (oral)2. Physics for the XXI Century, Roma (Italia), 04-07 September 2000.3. Growth and Characterization of Epitaxial GaAs and Nanostructures: preliminary results. F. Arciprete, F. Patella, E. Placidi, M. Fanfoni, A. Sgarlata, N. Motta, and A. Balzarotti. INFM Meeting, Catania 14-18 June 1999 – (poster). STM study of the Ag/GaAs(001)2×4 interface formation. E. Placidi, F. Arciprete, F. Patella, M. Fanfoni, N. Motta, and A. Balzarotti, (poster).4. Morphology of self-assembled InAs quantum dots on GaAs(001). F. Patella, F. Arciprete, M.Fanfoni, S. Nufris, E. Placidi and A. Balzarotti. INFM Meeting, Genova 12-16 June 2000 – (poster).5. Morfology of self-assembled InAs quantum dots on GaAs(001). F. Arciprete, F. Patella, S. Nufris, M. Fanfoni, E. Placidi, D.Schiumarini, and A. Balzarotti. INFM Meeting, Roma 18-22 June 2001 (oral). HREELS study of the surface anisotropy of GaAs(001). A. Balzarotti, M. Fanfoni, F. Patella, F. Arciprete, S. De Giorgio, E. Placidi, (poster)
    6. “Nanotubes and Nanostructures”, Frascati, Italy, 23-28 September, 2002.7. Electronic anisotropy study of the GaAs(001) As-rich surfaces by means of High Resolution Energy Loss Spectroscopy. E. Placidi, F. Arciprete, F. Patella, M.Fanfoni and A. Balzarotti, ECOSS 22, September 2003, Praha, Czech Republic. (oral)

    8. The very surface states on GaAs(001) surface by means of electronic and optical techniques, E. Placidi, F. Arciprete, C. Hogan, F. Patella, M. Fanfoni, C. Goletti, P. Chiaradia, A. Balzarotti, (Oral); Two-to-three dimensional transition in the InAs/GaAs(001) heteroepitaxial growth, E. Placidi, F. Arciprete, S. Nufris, M. Fanfoni, F. Patella, A. Sgarlata, A. Balzarotti (poster), APS March Meeting 2004, 22-26 Marzo 2004 Montreal, Canada

    9. Two-to-three dimensional transition in the InAs/GaAs(001) heteroepitaxial growth, E. Placidi, F. Arciprete, S. Nufris, M. Fanfoni, F. Patella, A. Sgarlata, A. Balzarotti, Pre-APS Workshop on Nanoscience and Nanostructured Materials, 19-20 Marzo 2004 Montreal, Canada (poster)

    10. Dynamic scaling and microscopic mechanisms during growth mode transition of the InAs/GaAs(001) heterostructure, E. Placidi, F. Arciprete, V.Sessi, M. Fanfoni, F. Patella and A. Balzarotti, 23rd European Conference on Surface Science (ECOSS-23) 4. – 9. Sept. 2005, Berlin, Germany (Oral)

    11. Dynamic scaling and microscopic mechanisms during growth mode transition of the InAs/GaAs(001) heterostructure, E. Placidi, F. Arciprete, V.Sessi, M. Fanfoni, F. Patella and A. Balzarotti, Nanocose meeting, Villa Mondragone, Università di Roma “Tor Vergata” 3 – 5 October 2005, Rome Italy (Invited Oral)

    12. Step erosion during nucleation of InAs/GaAs(001) quantum dots, E. Placidi, F. Arciprete, V.Sessi, M. Fanfoni, F. Patella and A. Balzarotti, MRS fall meeting 2005, 28th November – 2nd December, Boston, USA (Oral).

    13. Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, 17th-22nd September 2006, Bonassola, Italy.

    14. Surface Diffusion and Scaling Behavior in the nucleation and growth of InAs Quantum Dots on GaAs(001), E. Placidi, F. Arciprete, M. Fanfoni, E. Orsini, F. Patella and A. Balzarotti, MRS fall meeting 2006, 27th November – 1st December, Boston, USA (Oral)

    15. The InAs/GaAs(001) quantum dots transition: advances on understanding, Facets of Heteroepitaxy: Theory, Experiment, and Computation, 2008, 10-15 February, Banff, Canada (Invited Oral)

    16. Single quantum dot emission by nanoscale selective growth of InAs on GaAs: a bottom-up approach: Collaborative Conference on Interacting Nanostructures (CCIN), 2009 9-13 November, San Diego, USA (Invited Oral)

    17. Mechanisms in formation and evolution of InAs/GaAs(001) quantum dots: Nanoscience & Nanotechnology 2010, 2010 20-23 September, Frascati, Italy (Invited Oral)